1/6 february 2005 n high voltage special darlington structure n very rugged bipolar technology n high operation junction temperature n high dc current gain applications n driver for solenoid, relay and motor description the 2ST501T is a high voltage npn silicon transistor in monolithi c special darlington configuration mounted in jedec to-220 plastic package. figure 1: package figure 2: internal schematic diagram table 1: order codes table 2: absolute maximum ratings to-220 1 2 3 part number marking package packaging 2ST501T 2ST501T to-220 tube symbol parameter value unit v ces collector-emitter voltage (v be = 0) 500 v v ceo collector-emitter voltage (i b = 0) 350 v v ebo emitter-base voltage (i c = 0) 5v i c collector current 4a i cm collector peak current (t p < 5ms) 8a i b base current 0.5 a i bm base peak current (t p < 5ms) 2.5 a p tot total dissipation at t c = 25 o c 100 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c 2ST501T high voltage npn power transistor rev. 1
2ST501T 2/6 table 3: thermal data table 4: electrical characteristics (t case = 25 o c unless otherwise specified) * pulsed: pulsed duration = 300 m s, duty cycle 1.5 %. r thj-case thermal resistance junction-case max 1.25 o c/w symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (i e = 0) v ce = 500 v v ce = 500 v t case = 125 o c 100 500 m a m a i ceo collector cut-off current (i b = 0) v ce = 350 v v ce = 350 v t case = 125 o c 100 500 m a m a i ebo emitter cut-off current (i c = 0) v eb = 5 v 10 m a v ceo(sus) * collector-emitter sustaining voltage (i b = 0 ) i c = 10 ma l = 10 mh 350 v v ce(sat) * collector-emitter saturation voltage i c = 2 a i b = 2 ma 1.5 v v be(sat) * base-emitter saturation voltage i c = 2 a i b = 2 ma 2 v h fe dc current gain i c = 2 a v ce = 2 v 2000 t s t f inductive load storage time fall time v cc = 12 v v clamp = 250 v l = 4 mh i c = 2 a i b = 20 ma v be = -3 v 15 1.5 m s m s
2ST501T 3/6 figure 3: dc current gain figure 4: collector-source on voltage figure 5: dc current gain figure 6: base-source on voltage
2ST501T 4/6 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
2ST501T 5/6 table 5: revision history version release date change designator 25-feb-2005 1 first release.
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